Self aligned transistor patterning by optical lithography
At TNO, Patterning for Flexible Systems
Internship description:
We want to develop an optical self aligned technology capable of patterning multi level structures. Self alignment will be very important for the next generation of flexible display and electronics development (e.g. in a display self aligned structures can reduce the parasitic capacity resulting in a reduction of overall power consumption). Besides this advantage self alignment can also reduce the costs of expensive patterning and alignment tools and increase the throughput in fabrication plants. The aim of this study is to explore the possibilities of self aligned optical lithography. A working self aligned transistor will be the deliverable of this study.
Your tasks and responsibilities include:
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Literature research to provide you with the required theoretical background about lithography and dimensional stability of polymer substrates
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P
erform experiments in laboratory and clean room (substrate preparation, exposure, development)
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Fine tune process parameters (concentrations, deposition methods, exposure conditions)
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Evaluate results and interpret data obtained with various characterization techniques (AFM, optical microscopy, SEM/ TEM, UV-Vis absorption spectroscopy, etc)
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Participate in group meetings, provide feed-back, discuss results, and propose solutions to various challenging aspects
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write experimental reports
Profile:
You are an ambitious master student with both scientific and practical skills. You have a chemical engineering or applied science background. You have good communication skills in English and you are independent but also a team player.
For all inquiries, please contact:
For more information contact Martin van Neer / Mail: Martin.vanneer@tno.nl
Application form